Lattice Power offers a wide range of LED chip products for commercial, display, LCD backlighting, and general lighting applications. Our Products are based on two major technologies.
Our TS product series is based on lateral chip technology with a transparent substrate. Using this technology LatticePower can achieve a power density greater than 120lm/W. Lattice power TS chips have the advantages of robust design, low leakage, and high ESD yield.
Our TF product series uses GaN-on-Silicon EPI technology and vertical thin film chip design. Vertical thin film LEDs on silicon substrates offer the advantages of better thermal properties, and the ability to handle higher current density. They are the ideal choice for high power LEDs for general lighting applications.
GaN-on-Silicon EPI technology also offers the advantage of dramatically lowering the chip production cost by taking advantage of the cost reduction measures developed by the silicon IC industry. For example, it is much easier and more cost effective to move into 6 inch, 8 inch, and larger substrate size wafer production.
Lattice Power is the world-wide leader in GaN-on-Silicon EPI chip technology. We are the first company in the world to commercialize high performance, high power LED chips based on this technology.
Since inception, Lattice power has developed more than 50 Chinese and international patents covering many areas in LED EPI growth and chip processing. Our products are fully patent protected.